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NTR4003N Small Signal MOSFET
30 V, 0.56 A, Single N-Channel, SOT-23
Features
* Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit * * * * *
Design Low Gate Charge for Fast Switching ESD Protected Gate SOT-23 Package Provides Excellent Thermal Performance Minimum Breakdown Voltage Rating of 30 V These are Pb-Free Devices
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V(BR)DSS 30 V RDS(on) TYP 1.0 W @ 4.0 V 1.5 W @ 2.5 V ID MAX 0.56 A
Applications
* Notebooks:
Level Shifters Logic Switches Low Side Load Switches Portable Applications
1 Value 30 20 0.5 0.37 PD ID 0.69 0.56 0.40 PD IDM TJ, Tstg IS TL 0.83 1.7 -55 to 150 1.0 260 W A C A C W A 1 2 SOT-23 CASE 318 STYLE 21 3 Unit V V A Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State TA = 25C TA = 85C Symbol VDSS VGS ID
N-Channel
3
*
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
2
MARKING DIAGRAM/ PIN ASSIGNMENT
3 Drain TR8 M G G 1 Gate 2 Source
Steady State t < 10 s TA = 25C TA = 85C t<5s tp = 10 ms
Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
TR8 = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and overbar may vary depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device Package SOT-23 (Pb-Free) SOT-23 (Pb-Free) Shipping 3000/Tape & Reel 10,000/Tape & Reel
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t < 10 s (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol RqJA RqJA RqJA Max 180 150 300 Unit C/W
NTR4003NT1G NTR4003NT3G
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2006
1
May, 2006 - Rev. 0
Publication Order Number: NTR4003N/D
NTR4003N
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance RDS(on) Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Gate Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SOURCE-DRAIN DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 10 mA TJ = 25C TJ = 125C 0.65 0.45 14 ns 0.7 V td(on) tr td(off) tf VGS = 4.5 V, VDD = 5.0 V, ID = 0.1 A, RG = 50 W 16.7 47.9 65.1 64.2 ns Ciss Coss Crss QG(TOT) QG(TH) QGS QGD VGS = 5.0 V, VDS = 24 V, ID = 0.1 A VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V 21 19.7 8.1 1.15 0.15 0.32 0.23 nC pF gFS VGS(TH) VGS(TH)/TJ VGS = 4.0 V, ID = 10 mA VGS = 2.5 V, ID = 10 mA VDS = 3.0 V, ID = 10 mA VGS = VDS, ID = 250 mA 0.8 3.4 1.0 1.5 0.33 1.5 2.0 1.4 V mV/C V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = 30 V TJ = 25C VGS = 0 V, ID = 100 mA 30 40 1.0 1.0 V mV/C mA mA Symbol Test Condition Min Typ Max Units
VDS = 0 V, VGS = 10 V
W S
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 8A/ms, IS = 10 mA
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures.
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NTR4003N
TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted)
1.6 VGS = 10 V to 5 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 4.5 V 1.2 1.2 1.6 VDS 10 V TJ = -55C
0.8 4V
0.8
TJ = 25C TJ = 125C
0.4
3.5 V 2.5 V
0.4
0 0 1
0 2 0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 3 1 2 4 VGS, GATE-TO-SOURCE VOLTAGE (V) 5
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 10 ID = 0.2 A RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1
Figure 2. Transfer Characteristics
VGS = 10 V 0.8 TJ = 125C
8
6
0.6 TJ = 25C
4
0.4
2 0 2.4
0.2 0 0 0.1 0.2
TJ = -55C
2.8 3.2 3.6 VGS, GATE-TO-SOURCE VOLTAGE (V)
4
0.3
0.4
0.5
0.6
ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) (NORMALIZED) 1.80 1.60 1.40 1.20 1.00 0.80 0.60 -25 ID = 0.3 A VGS = 4.5 V IDSS, LEAKAGE (nA)
Figure 4. On-Resistance vs. Drain Current and Temperature
1000 VGS = 0 V
TJ = 150C 100
TJ = 125C
10 -50 0 25 50 75 100 125 150 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NTR4003N
TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted)
TJ = 25C VGS = 0 V C, CAPACITANCE (pF) 40 VGS, GATE-TO-SOURCE VOLTAGE (V) 50 5 TJ = 25C ID = 0.1 A
4
30 Ciss Coss 10 Crss
3
20
2
1 0 0 0.4 0.8 1.2 QG, TOTAL GATE CHARGE (nC)
0
0
4
8
12
16
20
DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source & Drain-to-Source Voltage vs. Total Charge
1 IS, SOURCE CURRENT (A) VGS = 0 V
0.1
0.01
TJ = 150C
TJ = 25C
0.001 0.4
0.6 VSD, SOURCE-TO-DRAIN VOLTAGE (V)
0.8
Figure 9. Diode Forward Voltage vs. Current
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NTR4003N
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AN
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094
D
3 SEE VIEW C
E
1 2
HE c b e q 0.25
A L A1 L1 VIEW C
DIM A A1 b c D E e L L1 HE
MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083
MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104
STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN
SOLDERING FOOTPRINT*
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035 0.8 0.031
SCALE 10:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NTR4003N/D

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